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Schottky barrier diode
RB085T-40
Applications Switching power supply Dimensions (Unit : mm) Structure
Features 1) Cathode common type. (TO-220) 2) Low IR 3) High reliability Construction Silicon epitaxial planer
(1) (2) (3)
8
Absolute maximum ratings (Ta=25C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak (60Hz / 1cyc) (*1) Junction temperature Storage temperature
Symbol VRM VR Io IFSM Tj Tstg
Limits 45 40 10 100 150 -40 to +150
Unit V V A A C C
(*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=132C Electrical characteristic (Ta=25C) Parameter Forward voltage Reverse current Thermal impedance
Symbol VF IR jc
Min. -
Typ. -
Max. 0.55 200 2.5
Unit V A C/W
Conditions IF=5A VR=40V junction to case
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1/3
2010.02 - Rev.D
RB085T-40
Electrical characteristic curves
10 Ta=150C REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(A) Ta=125C 1 Ta=75C Ta=25C 0.1 Ta=-25C
Data Sheet
Ta=150C 100000 10000 1000 100 10 1 0.1
Ta=125C 1000 f=1MHz Ta=75C CAPACITANCE BETWEEN TERMINALS:Ct(pF)
100
Ta=25C
Ta=-25
10
0.01 0 100 200 300 400 500 600 FORWARD VOLTAGE : V F(mV) VF-IF CHARACTERISTICS
0.01 0 10 20 30 REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS 40
1 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS
530 FORWARD VOLTAGE:VF(mV) Ta=25C IF=5A n=30pcs
300 REVERSE CURRENT:IR(uA) 250 200 150 100 AVE:20.3uA 50 0 VF DISPERSION MAP IR DISPERSION MAP Ta=25C VR=40V n=30pcs
800 790 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 780 770 760 750 740 730 720 710 AVE:728.1pF Ta=25C f=1MHz VR=0V n=10pcs
520
510
500 AVE:504.0mV 490
480
700 Ct DISPERSION MAP
300 RESERVE RECOVERY TIME:trr(ns) 250 200 150 100 50 0 AVE:156.0A Ifsm 1cyc 8.3ms
30 25 20 15 10 5 0 trr DISPERSION MAP AVE:12.30ns Ta=25C IF=0.5A IR=1A Irr=0.25*IR n=10pcs
1000 Ifsm PEAK SURGE FORWARD CURRENT:IFSM(A) 8.3ms 8.3ms
PEAK SURGE FORWARD CURRENT:IFSM(A)
1cyc 100
10 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100
IFSM DISPERSION MAP
1000 TRANSIENT /W) THAERMAL IMPEDANCE:Rth (
100 Ifsm t
Mounted on epoxy board
IM=100mA
15
IF=1A FORWARD POWER DISSIPATION:Pf(W) Rth(j-a) D=1/2 10 Sin(=180) DC
PEAK SURGE FORWARD CURRENT:IFSM(A)
10
1ms
tim
300us
100
1
Rth(j-c)
5
10 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100
0.1 0.001
0 0.1 10 1000 0 TIME:t(s) Rth-t CHARACTERISTICS 5 10 15 AVERAGE RECTIFIED FORWARD CURRENT : Io(A) Io-Pf CHARACTERISTICS 20
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2/3
2010.02 - Rev.D
RB085T-40
Data Sheet
5
30 0A 0V 20 Io AVERAGE RECTIFIED FORWARD CURRENT:Io(A) t T VR D=t/T VR=20V Tj=150C
30 0A 0V 20 Io t T VR D=t/T VR=20V Tj=150C
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
4 REVERSE POWER DISSIPATION:PR (W)
3 D=1/2 2 DC 1
Sin(=180)
DC D=1/2
DC D=1/2
10 Sin(=180)
10 Sin(=180)
0 0 10 20 30 40 REVERSE VOLTAGE : V R(V) VR-PR CHARACTERISTICS
0 0 25 50 75 100 125 150
0 0 25 50 75 100 125 150 CASE TEMPARATURE:Tc(C) Derating Curve"(Io-Tc)
AMBIENT TEMPERATURE:Ta(C) Derating Curve"(Io-Ta)
30 ELECTROSTATIC DISCHARGE TEST ESD(KV) No break at 30kV 25 20 AVE:11.5k 15 10 5 0 C=200pF R=0 ESD DISPERSION MAP C=100pF R=1.5k
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3/3
2010.02 - Rev.D
Notice
Notes
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